Time-Dependent Leakage Current Behavior of Integrated Ba0.7Sr0.3TiO3 Thin Film Capacitors during Stressing
- 1 September 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (9S) , 4919-4924
- https://doi.org/10.1143/jjap.35.4919
Abstract
Time-dependent leakage current behavior of integrated Ba0.7Sr0.3TiO3 capacitors accelerated by stresses in excess of operating temperature and voltage was studied. Current-voltage (J-V) studies revealed that the time-dependent leakage current behaviors are different according to the initial conduction process. When the initial leakage current of a fully processed integrated capacitor at high voltages at elevated temperatures is of the Frenkel-Poole emission type, the leakage current increases rapidly with time. The difference in the initial leakage currents is related to the difference in film growth conditions which determine the formation of defects in the films. The time-dependent increase in leakage current is ascribed to a change in the conduction mechanism from the interface-controlled Schottky type to the bulk-related space-charge-limited type due to the accumulation of oxygen vacancies near the cathode as a result of interface barrier lowering and the migration of distributed oxygen vacancies across the film.Keywords
This publication has 14 references indexed in Scilit:
- Temperature-Dependent Current-Voltage Characteristics of Fully Processed Ba0.7Sr0.3TiO3 Capacitors Integrated in a Silicon DeviceJapanese Journal of Applied Physics, 1996
- Integration technology of ferroelectrics and the performance of the integrated ferroelectricsIntegrated Ferroelectrics, 1995
- Analysis of the Resistance Degradation of SrTiO3 and BaxSr(1-x)TiO3 Thin FilmsJapanese Journal of Applied Physics, 1995
- Leakage and interface engineering in titanate thin films for non-volatile ferroelectric memory and ulsi dramsIntegrated Ferroelectrics, 1995
- Elements of the leakage current of high-? ferroelectric PZT filmsIntegrated Ferroelectrics, 1995
- Si LSI Process Technology for Integrating Ferroelectric CapacitorsJapanese Journal of Applied Physics, 1994
- Characterization of conduction in PZT thin films produced by laser ablation depositionIntegrated Ferroelectrics, 1993
- Time‐Dependent Dielectric Breakdown in BaTiO3 Thin FilmsJournal of the Electrochemical Society, 1993
- dc Electrical Degradation of Perovskite‐Type Titanates: II, Single CrystalsJournal of the American Ceramic Society, 1990
- Ferroelectric memoriesFerroelectrics, 1990