Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (7) , 366-368
- https://doi.org/10.1109/55.103609
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- On the effect of hot-carrier stressing on MOSFET terminal capacitancesIEEE Transactions on Electron Devices, 1988
- Consistent model for the hot-carrier degradation in n-channel and p-channel MOSFETsIEEE Transactions on Electron Devices, 1988
- The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET'sIEEE Transactions on Electron Devices, 1987
- Measurement and numerical modeling of short-channel MOSFET gate capacitancesIEEE Transactions on Electron Devices, 1987
- Hot-carrier-injected oxide region and hot-electron trapping as the main cause in Si nMOSFET degradationIEEE Transactions on Electron Devices, 1987
- Effects of hot-carrier trapping in n- and p-channel MOSFET'sIEEE Transactions on Electron Devices, 1983
- Generation of interface states by hot hole injection in MOSFET'sIEEE Transactions on Electron Devices, 1982