Investigation of GaAs—InyGa1−yPzAs1−z–InxGa1−x‐As grading heterojunctions formation
- 1 January 1980
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 15 (4) , 387-394
- https://doi.org/10.1002/crat.19800150403
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Dislocation density in InxGa1–xAs films grown on GaAs substrates with intermediate buffer layer InGaAsP of variable compositionCrystal Research and Technology, 1979
- Growth and characterization of liquid−phase epitaxial InxGa1−xAsJournal of Applied Physics, 1975
- A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrateApplied Physics Letters, 1975