Dislocation density in InxGa1–xAs films grown on GaAs substrates with intermediate buffer layer InGaAsP of variable composition
- 1 January 1979
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 14 (4) , 399-408
- https://doi.org/10.1002/crat.19790140405
Abstract
No abstract availableKeywords
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