LPE of GaAsxSbyP1−x−y continuously graded composition layer
- 1 December 1976
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (12) , 5484-5486
- https://doi.org/10.1063/1.322547
Abstract
GaAsxSbyP1−x−y continuously graded composition layers were grown on GaAs substrate by the LPE method. This technique improves the quality of subsequently grown III‐V mixed crystals which have larger lattice constant than GaAs.This publication has 5 references indexed in Scilit:
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