Limitations on stress compensation in AlxGa1 −xAs1−yPy–GaAs LPE layers
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (11) , 4738-4740
- https://doi.org/10.1063/1.1663128
Abstract
It has been shown previously that the room‐temperature lattice mismatch between GaAs and AlxGa1−xAs may be reduced by the incorporation of small amounts of phosphorus in the alloy. By measuring the curvature of thin (2 μ) freely suspended foils of AlxGa1−xAs1−yPy grown by LPE, we have determined the gradient in the lattice parameter in foils which have been substantially stress‐compensated. This gradient is caused by depletion of aluminum and phosphorus from the melt during growth. Such depletion limits the extent to which this stress‐compensating technique may be applied to the growth of GaAs heterostructure lasers. Present results imply that stress reductions of about a factor of 10 may be obtained for 2‐μ quaternary layers, although greater factors are achievable for thinner layers.This publication has 8 references indexed in Scilit:
- Stress compensation in GaAs–Al0.24 Ga0.76 As1−y Py LPE binary layersJournal of Applied Physics, 1974
- Phase equilibria in III–V quaternary systems—application to Al-Ga-P-AsJournal of Physics and Chemistry of Solids, 1974
- Stress compensation in Ga1−xAlxAs1−yPy LPE layers on GaAs substratesApplied Physics Letters, 1973
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- Thermal Expansion of AlAsJournal of Applied Physics, 1970
- Single crystal electroluminescent materialsMaterials Science and Engineering, 1970
- Phase extent of gallium arsenide determined by the lattice constant and density methodActa Crystallographica, 1965