On the physics and modeling of small semiconductor devices—IV. Generalized, retarded transport in ensemble Monte Carlo techniques
- 31 March 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (3) , 233-239
- https://doi.org/10.1016/0038-1101(83)90088-6
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- On the Use of Monte Carlo Techniques for the Calculation of Transient Dynamic Response in SemiconductorsPhysica Status Solidi (b), 1980
- Derivation of the Continuous-Time Random-Walk EquationPhysical Review Letters, 1980
- Self-Scattering Path-Variable Formulation of High-Field, Time-Dependent, Quantum Kinetic Equations for Semiconductor Transport in the Finite-Collision-Duration RegimePhysical Review Letters, 1979
- Calculation of hot electron phenomenaSolid-State Electronics, 1978
- Dynamical Response of Electrons in GaAs at 300 KPhysica Status Solidi (b), 1977
- Effect of ionised impurity scattering on the electron transit time in GaAs and InP f.e.t.sElectronics Letters, 1977
- Infrared Cyclotron Resonance in Semiconducting Surface Inversion LayersPhysical Review Letters, 1976
- Generalized master equations for continuous-time random walksJournal of Statistical Physics, 1973
- Numerical solution of electron motion in solidsJournal of Physics C: Solid State Physics, 1972
- Path Variable Formulation of the Hot Carrier ProblemPhysical Review B, 1967