A dual-wavelength indium gallium nitride quantum well light emitting diode
- 15 October 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (16) , 2532-2534
- https://doi.org/10.1063/1.1410345
Abstract
We have designed and implemented a monolithic, dual-wavelength blue/green light emitting diode (LED) consisting of two active indium gallium nitride/gallium nitride (InGaN/GaN) multiple-quantum-well segments. The segments are part of a single vertical epitaxial structure in which a p++/n++ InGaN/GaN tunnel junction is inserted between the LEDs, emitting in this proof-of-concept device at 470 nm and 535 nm, respectively. The device has been operated as a three-terminal device with independent electrical control of each LEDs to a nanosecond time scale.Keywords
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