GaN-Based Light Emitting Diodes with Tunnel Junctions
- 1 August 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (8B) , L861-863
- https://doi.org/10.1143/jjap.40.l861
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- On-wafer continuous-wave operation of InGaN/GaNviolet laser diodesElectronics Letters, 2000
- Low-resistance InGa(Al)As Tunnel Junctions for Long Wavelength Vertical-cavity Surface-emitting LasersJapanese Journal of Applied Physics, 2000
- A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laserApplied Physics Letters, 2000
- Room Temperature Lasing at Blue Wavelengths in Gallium Nitride MicrocavitiesScience, 1999
- Long Wavelength GaInAsP/InP Laser with n-n Contacts Using AlAs/InP Hole Injecting Tunnel JunctionJapanese Journal of Applied Physics, 1999
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer LayersJapanese Journal of Applied Physics, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989