On-wafer continuous-wave operation of InGaN/GaNviolet laser diodes
- 12 October 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (21) , 1779-1780
- https://doi.org/10.1049/el:20001276
Abstract
Continuous-wave operation of etched-facet InGaN/GaN multi-quantum-well ridge-waveguide laser diodes grown by low pressure MOVPE on sapphire substrate has been achieved on-wafer for > 2 min at 15% above threshold. The threshold current density and voltage were 9.1 kA/cm2 and 7.6 V, respectively, at 15°C, and the lasing wavelength was 400.6 nm.Keywords
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