Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
- 1 November 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (11B) , L1373-1375
- https://doi.org/10.1143/jjap.37.l1373
Abstract
We demonstrated for the first time room-temperature continuous wave operation of InGaN laser diodes with a vertical conducting structure fabricated on a SiC substrate. The threshold current and voltage were 84 mA and 12 V, respectiely, under pulsed operation. The threshold current corresponds to a threshold current density of 5.6 kA/cm2, which is the lowest ever reported with InGaN laser diodes on a SiC substrate. Under continuous wave operation, the threshold current and voltage were 115 mA and 10.5 V, respectiely. The peak lasing wavelength was 408.2 nm. Longitudinal modes of the optical cavity were clearly obsered. The laser oscillation was obsered up to 40°C under CW operation.Keywords
This publication has 12 references indexed in Scilit:
- Room-temperature continuous-wave operation of GaInN/GaNmultiquantum well laser diodeElectronics Letters, 1998
- Room-temperature pulsed operation of a GaInN multiple-quantum-well laser diodeElectronics Letters, 1998
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN SubstratesJapanese Journal of Applied Physics, 1998
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1997
- Macrodiversity technique for improvement in BERin wireless systemsElectronics Letters, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 KApplied Physics Letters, 1996
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996