The study of defects in type-IV semiconductors by Mössbauer spectroscopy
- 1 January 1980
- journal article
- Published by EDP Sciences in Revue de Physique Appliquée
- Vol. 15 (2) , 311-322
- https://doi.org/10.1051/rphysap:01980001502031100
Abstract
The paper discusses the use of Mössbauer Spectroscopy for the study of defects in semiconductors. Some recent experiments are presented which involve the implantation of deep centers in Si, Ge and diamondKeywords
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