A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS
- 22 November 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 5.5 GHz fully integrated low-power ESD-protected low-noise amplifier (LNA), designed and verified in a 90 nm RF CMOS technology, is presented for the first time. This 9.7 mW LNA features a 13.3 dB power gain with a noise figure of 2.9 dB, while maintaining an input return loss of -14 dB.Keywords
This publication has 7 references indexed in Scilit:
- A 5-6 GHz fully-integrated CMOS LNA for a dual-band WLAN receiverPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 5 GHz band CMOS low noise amplifier with a 2.5 dB noise figurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Impact of intrinsic channel resistance on noise performance of CMOS LNAIEEE Electron Device Letters, 2002
- Significance of the failure criterion on transmission line pulse testingMicroelectronics Reliability, 2002
- A mixed-signal design roadmapIEEE Design & Test of Computers, 2001
- High-performance 5.2 GHz LNA with on-chip inductorto provide ESD protectionElectronics Letters, 2001
- A 1.5-V, 1.5-GHz CMOS low noise amplifierIEEE Journal of Solid-State Circuits, 1997