Room temperature high-field Hall mobility in n-type silicon
- 1 December 1969
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 2 (12) , 2396-2401
- https://doi.org/10.1088/0022-3719/2/12/325
Abstract
The high-field Hall mobility of n-type silicon has been studied by assuming Maxwellian distribution function of the carriers in the valleys. Different values of inter-valley coupling constants have been used. It has been found that a good fit to the experimental results for the direction may be obtained by a proper choice of the inter-valley coupling constants. But even then there remain some discrepancies in the detailed characteristics.Keywords
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