Subthreshold kinks in fully depleted SOI MOSFET's
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (12) , 542-544
- https://doi.org/10.1109/55.475581
Abstract
Measured current-voltage characteristics of scaled, floating-body, fully depleted (FD) SOI MOSFET's that show subthreshold kinks controlled by the back-gate (substrate) bias are presented. The underlying physical mechanism is described, and is distinguished from the well known kink effect in partially depleted devices. The physical insight attained qualifies the meaning of FD/SOI and implies new design issues for low-voltage FD/SOI CMOS.Keywords
This publication has 6 references indexed in Scilit:
- Technology trends of silicon-on-insulator-its advantages and problems to be solvedPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Investigation of body effect of fully depleted n channel SOI device as a function of body biasPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Physical subthreshold MOSFET modeling applied to viable design of deep-submicrometer fully depleted SOI low-voltage CMOS technologyIEEE Transactions on Electron Devices, 1995
- Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET'sIEEE Transactions on Electron Devices, 1991
- Anomalous subthreshold current—Voltage characteristics of n-channel SOI MOSFET'sIEEE Electron Device Letters, 1987
- Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET'sIEEE Transactions on Electron Devices, 1983