Investigation of body effect of fully depleted n channel SOI device as a function of body bias

Publisher Website

17 December 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/soi.1994.514233

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Modeling the effect of back gate bias on the subthreshold behavior of a SiGe-channel SOI PMOS device
Solid-State Electronics, 1993
Analysis of the dependence of the subthreshold swing and the threshold voltage on the substrate voltage of thin-film SOI MOSFETs. Extraction of the interface state densities
Solid-State Electronics, 1992
Back-gate bias effect on the subthreshold behavior and the switching performance in an ultrathin SOI CMOS inverter operating at 77 and 300 K
IEEE Transactions on Electron Devices, 1992