Stimulated Raman scattering from free holes inp-type indium antimonide

Abstract
Stimulated Raman scattering from photoexcited holes at magnetic fields up to 68 kG in pInSb is described. Experiments varying excitation wavelength, magnetic field, polarization, and sample orientation are discussed. A comparison of the experimental results with the latest valence-band calculations allows the identification of the energy levels involved in the scattering process. For sample orientation H100, the initial state is the valence-band Landau level ALH 10 1+31 and the final state is BHH 31 331. ALH, BLH are the "light hole" ladders (approximate spin M=+32 and M=32, respectively). AHH, BHH are the "heavy hole" ladders (approximate spin M=12 and M=+12, respectively). For the orientation H111 initial state and final state are BLH 00 0+ and AHH 32 O+, respectively. The holes involved in this Raman scattering process always have a nonzero momentum along the direction of the magnetic field (kH0). The largest Raman shift we measured was about 2.7 cm1.