Strained-insulator In/sub x/Al/sub 1-x/As/n/sup +/-In/sub 0.53/Ga/sub 0.47/As heterostructure field-effect transistors
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (9) , 1986-1992
- https://doi.org/10.1109/16.83719
Abstract
No abstract availableKeywords
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