A recessed-gate In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub 0.53/ Ga/sub 0.47/As MIS-type FET
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (4) , 646-650
- https://doi.org/10.1109/16.22469
Abstract
No abstract availableKeywords
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