The quantitative determination of the residual stress profile in oxidized p+ silicon films
- 30 June 1996
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 54 (1-3) , 684-689
- https://doi.org/10.1016/s0924-4247(97)80038-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A study of residual stress distribution through the thickness of p/sup +/ silicon films (thermal oxidation effects)IEEE Transactions on Electron Devices, 1993
- Residual stress and mechanical properties of boron-doped p+-silicon filmsSensors and Actuators A: Physical, 1990
- Plastic deformation of higly doped SiliconSensors and Actuators A: Physical, 1990