Redissolution of precipitated oxygen in Czochralski-grown silicon wafers
- 15 December 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (12) , 987-989
- https://doi.org/10.1063/1.92636
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thermally Induced Defect Behavior and Effective Intrinsic Gettering Sink in Silicon WafersJournal of the Electrochemical Society, 1981
- Heterogeneous distribution of interstitial oxygen in annealed Czochralski-grown silicon crystalsApplied Physics Letters, 1981
- Improved Intrinsic Gettering Technique for High-Temperature-Treated CZ Silicon WafersJapanese Journal of Applied Physics, 1981
- Precipitation and redistribution of oxygen in Czochralski-grown siliconApplied Physics Letters, 1980
- Dislocation pinning effect of oxygen atoms in siliconApplied Physics Letters, 1977
- Oxygen precipitation and the generation of dislocations in siliconPhilosophical Magazine, 1976