Electron scattering by localized impurity potentials in compensated GaAs
- 15 March 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 23 (6) , 2956-2959
- https://doi.org/10.1103/physrevb.23.2956
Abstract
The influence of a newly suggested scattering mechanism, namely, scattering at centers subtending a localized potential, on electron mobility in compensated GaAs is analyzed. The effects of polar optic, deformation-potential acoustic, piezoelectric, and ionized-impurity modes of scattering are also jointly treated together with band nonparabolicity and wave-function mixing. Electron Hall mobility is computed by an iterative solution of the Boltzmann equation without having to assume Matthiessen's rule. Agreement with a large number of experimental data is consistently obtained with one single value of 95 meV for the localized scattering potential, and it is not necessary to assume excessively large compensation ratios.Keywords
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