Channeling implants of boron in silicon
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 661-665
- https://doi.org/10.1016/0168-583x(91)96253-h
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Deep implants by channeling implantationMaterials Science and Engineering: B, 1989
- Uniform doping of channeled-ion implantationJournal of Applied Physics, 1978
- Computer simulation of atomic-displacement cascades in solids in the binary-collision approximationPhysical Review B, 1974
- Channeling and dechanneling of ion-implanted phosphorus in siliconJournal of Applied Physics, 1973