Structural and electronic properties of epitaxially grown CuInS 2 films
- 1 February 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 361-362, 504-508
- https://doi.org/10.1016/s0040-6090(99)00804-4
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Epitaxial growth of CuInS2 on sulphur terminated Si(001)Applied Physics Letters, 1998
- Rutherford backscattering spectroscopy of rough films: Experimental aspectsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1998
- Epitaxial heterojunction devicesSolar Energy Materials and Solar Cells, 1997
- Structure of sulphur-terminated silicon surfacesSurface Science, 1997
- Heteroepitaxy of CuInS2 on Si(111)Applied Physics Letters, 1996
- Epitaxial growth of CuInS2 on sulphur terminated Si(111)Applied Physics Letters, 1996
- Thin CuInS2 films by three-source molecular beam depositionThin Solid Films, 1995
- Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxyApplied Physics Letters, 1995
- Direct growth of heteroepitaxial CuInSe2 layers on Si substratesApplied Physics Letters, 1994
- A semiautomatic algorithm for rutherford backscattering analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986