A new approach to the RF power operation of MESFETs

1 May 1989

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques

Vol. 37 (5) , 817-825
https://doi.org/10.1109/22.17447

Abstract

A large-signal numerical model for a MESFET is described which allows investigations of the behavior of these devices at X-band frequencies under large-signal conditions. The authors of numerical simulations are compared with those of the measurements and provide on improved understanding of the behavior of GaAs MESFETs that operate at microwave frequencies and with high power requirements. The analysis yields some indications about the optimum design of these devices.

Keywords

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