Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInstudied by dark-field spectroscopy
- 15 December 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 54 (24) , 17616-17619
- https://doi.org/10.1103/physrevb.54.17616
Abstract
The order-dependent valence-band splitting and direct-gap reduction in spontaneously ordered indirect-gap AlIn are determined by dark-field spectroscopy at room temperature. Similar to direct-gap GaIn both parameters depend on the degree of long-range -type order. We obtain the direct gap for disordered and the order-induced changes of the spin-orbit splitting and the crystal-field splitting normalized to the direct-gap change for perfectly ordered AlIn.
Keywords
This publication has 13 references indexed in Scilit:
- Polarization-dependent optical parameters of arbitrarily anisotropic homogeneous layered systemsPhysical Review B, 1996
- Band-gap reduction and valence-band splitting of ordered GaInP2Applied Physics Letters, 1995
- Band-gap reduction and valence band splitting in spontaneously ordered GaInP2 studied by dark-field spectroscopySolid State Communications, 1995
- Stability of the wurtzite-type structure under high pressure: GaN and InNPhysical Review B, 1994
- Dependence of the optical properties of semiconductor alloys on the degree of long-range orderApplied Physics Letters, 1993
- Valence-band splitting in orderedP studied by temperature-dependent photoluminescence polarizationPhysical Review B, 1992
- Band-gap narrowing in ordered and disordered semiconductor alloysApplied Physics Letters, 1990
- Polarized band-edge photoluminescence and ordering inPPhysical Review Letters, 1989
- Observation of Strong Ordering inalloy semiconductorsPhysical Review Letters, 1988
- Conduction Bands in In1−xAlxPJournal of Applied Physics, 1970