MOVPE growth of InGaAs/InAlAs using trimethylamine alane for photonic and electronic devices
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 70-75
- https://doi.org/10.1016/0022-0248(92)90439-p
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- GaAs/AlGaAs quantum well and modulation-doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alaneApplied Physics Letters, 1991
- Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applicationsJournal of Crystal Growth, 1991
- GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium sourceElectronics Letters, 1990
- Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alaneApplied Physics Letters, 1990
- Characterization of InGaAsP/InP double-heterostructure wafers grown by metalorganic vapor phase epitaxy for semiconductor lasers by photoluminescence investigation with high-power YAG-laser excitationJournal of Applied Physics, 1988
- Interface roughness and charge carrier recombination lifetimes in GaInAs/InP quantum wells grown by LP-MOVPEJournal of Crystal Growth, 1988
- Growth of AlInAs and heterostructures on InP by OMVPEJournal of Crystal Growth, 1988