Heteroepitaxial growth of Ge on 〈111〉 Si by vacuum evaporation
- 1 December 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (11) , 1070-1072
- https://doi.org/10.1063/1.93404
Abstract
The heteroepitaxial growth of Ge on 〈111〉 Si substrates has been obtained by thermal and electron gun evaporation in the deposition temperature range 375–425 °C. Reflection high-energy electron diffraction analysis shows that the films are 〈111〉 oriented and exhibit high crystalline quality with no evidence of twins. It was also found that the films are p type with the same mobility as bulk Ge single crystals.Keywords
This publication has 11 references indexed in Scilit:
- Structure of vapor-deposited Ge films as a function of substrate temperatureJournal of Applied Physics, 1982
- The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layersJournal of Applied Physics, 1982
- Low energy electron loss spectroscopy of Si–Ge interfacesJournal of Vacuum Science and Technology, 1981
- Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition techniqueApplied Physics Letters, 1981
- Heteroepitaxy of vacuum-evaporated Ge films on single-crystal SiApplied Physics Letters, 1981
- Solid-phase heteroepitaxy of Ge on 〈100〉SiApplied Physics Letters, 1981
- Structural and electrical properties of polycrystalline Ge filmsPhysica Status Solidi (a), 1978
- Epitaxial growth behavior of Ge on Si {111} surfacesPhysica Status Solidi (a), 1970
- Epitaxial Growth of Ge Layers on Si Substrates by Vacuum EvaporationJapanese Journal of Applied Physics, 1968
- Epitaxial Deposition of Germanium by Both Sputtering and EvaporationJournal of Applied Physics, 1966