Two-stage epitaxial growth of GaP on spinel
- 31 October 1974
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 24-25, 239-243
- https://doi.org/10.1016/0022-0248(74)90311-x
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Epitaxial growth and characterization of GaP on insulating substratesJournal of Crystal Growth, 1972
- The use of metalorganics in the preparation of semiconductor materials: Growth on insulating substratesJournal of Crystal Growth, 1972
- Lang Topographic Studies of III-V Heteroepitaxial Films Grown on Sapphire and SpinelJournal of Applied Physics, 1972
- Two-Stage Epitaxial Growth of GaAs E1 Diodes on SpinelJournal of Applied Physics, 1972
- The preparation and properties of chemically vapor deposited silicon on sapphire and spinelJournal of Crystal Growth, 1971
- Thin-Film Devices on Dielectric SubstratesJournal of Vacuum Science and Technology, 1970
- Comparison of Liquid-Encapsulated and Solution-Grown Substrates for Efficient GaP DiodesJournal of Applied Physics, 1969