In situ analysis of thin film deposition process using time of flight (TOF) ion beam analysis methods
- 1 September 1996
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 118 (1-4) , 772-781
- https://doi.org/10.1016/0168-583x(95)01205-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Time-of-Flight pulsed ion beam surface analysis as a means ofin situ, real-time characterization of the growth of ferro-electric and conductive oxide heterostructuresIntegrated Ferroelectrics, 1995
- Pulsed ion beam surface analysis as a means of in situ real-time analysis of thin films during growthJournal of Vacuum Science & Technology A, 1994
- Atomic Beam Modifications of Insulator SurfacesJournal of the American Ceramic Society, 1993
- Scattering and Recoiling Spectrometry: An Ion's Eye View of Surface StructureScience, 1990
- Coaxial impact-collision ion scattering spectroscopy (CAICISS): A novel method for surface structure analysisNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Ion scattering spectroscopy in the impact collision mode (ICISS): Surface structure information from noble gas and alkali-ion scatteringNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Enhancement of the ICISS method by simultaneous detection of ions and neutralsSurface Science, 1986
- Quantitative surface structure analysis by low-energy ion scatteringNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1984
- Low-energy neon-ion scattering and neutralization on first and second layers of a Ni(001) surfaceSurface Science, 1979
- Scattering of Low-Energy Noble Gas Ions from Metal SurfacesJournal of Applied Physics, 1967