Suppression of I-V kink in doped channel InAlAs/InGaAs/InPheterojunction field-effect transistor (HFET) using silicon nitridepassivation

10 October 1996

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 32 (21) , 2026-2027
https://doi.org/10.1049/el:19961333

Abstract

The impact of silicon nitride (SiN) surface passivation on the kink effect of doped channel InAlAs/InGaAs/InP HFETs has been investigated for the first time. Experiments show that the I-V kinks of these HFETs can be reduced significantly by using SiN surface passivation.

Keywords

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