dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation-doped field-effect transistors
- 22 May 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (21) , 2139-2141
- https://doi.org/10.1063/1.101151
Abstract
No abstract availableKeywords
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