Composition and Growth Kinetics of the Interfacial Layer for MOCVD HfO[sub 2] Layers on Si Substrates
- 1 January 2004
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 151 (4) , F77
- https://doi.org/10.1149/1.1648027
Abstract
No abstract availableKeywords
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