Transport and reactions of gold in silicon containing cavities

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Abstract
We quantified the strength of Au binding on cavity walls and in precipitates of the Au-Si molten phase within Si over the temperature range 1023–1123 K. Also determined was the diffusivity-solubility product of interstitial Au. These properties were obtained by using ion implantation and annealing to form multiple layers containing cavities or Au-Si precipitates and then measuring by Rutherford backscattering spectrometry the rate and extent of Au redistribution between layers during isothermal heating. Results were incorporated into a diffusion-reaction formalism describing the evolution of the coupled concentrations of interstitial Au, substitutional Au, Si interstitial atoms, and Si vacancies. Cavities were shown to be effective sinks for the gettering of Au from solution in Si.