Limiting Process for Gold In-Diffusion in Silicon with and without Extended Defects

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Abstract
Gold was in-diffused at 1150° C into silicon containing extended defects (dislocations or stacking faults) and into defect-free silicon single crystals, and the diffusion-limiting process for the gold in-diffusion was investigated. Gold diffusion in the crystals without defects and that very near the specimen surface in crystals with defects are limited by the diffusion of self-interstitials to the surface. Diffusion in the crystals with defects is limited by the diffusion of interstitial gold atoms from the surface. In crystals with an extremely low concentration of extended defects, the diffusion is limited by the diffusion of self-interstitials to the defects.