Confined electron states associated with secondary X and L conduction band minima of GaAs–Ga1-xAlxAs (001) quantum-well and sawtooth superlattices
- 1 August 1985
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 52 (2) , L39-L44
- https://doi.org/10.1080/01418638508244274
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Confined carrier quantum states in ultrathin semiconductor heterostructuresPublished by Springer Nature ,2007
- Electronic structure of GaAs-As quantum well and sawtooth superlatticesPhysical Review B, 1985
- Effect of Inversion Symmetry on the Band Structure of Semiconductor HeterostructuresPhysical Review Letters, 1984
- New electron states in GaAs-GaxAl1-xAs superlatticeJournal of Physics C: Solid State Physics, 1984
- The electronic structure and stability of localised defects in semiconductors. II. Vacancies in silicon, gallium phosphide and zinc selenideJournal of Physics C: Solid State Physics, 1984
- New Transient Electrical Polarization Phenomenon in Sawtooth SuperlatticesPhysical Review Letters, 1983
- A simple model for the index of refraction of GaAs–AlAs superlattices and heterostructure layers: Contributions of the states around ΓJournal of Vacuum Science & Technology B, 1983
- New method for calculating electronic properties of superlattices using complex band structuresPhysical Review B, 1981