Selective growth of aluminum using a novel CVD system
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 442-445
- https://doi.org/10.1109/iedm.1988.32850
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- LPCVD of Titanium Disilicide: Selectivity of GrowthJournal of the Electrochemical Society, 1987
- Selective Molybdenum Deposition by LPCVDJournal of the Electrochemical Society, 1987
- Effect of Insulator Surface on Selective Deposition of CVD Tungsten FilmsJournal of the Electrochemical Society, 1986
- Characterization of LPCVD Aluminum for VLSI ProcessingJournal of the Electrochemical Society, 1984