A V2+centre in GaAs studied by thermally detected EPR
- 29 February 1988
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 21 (6) , 1137-1153
- https://doi.org/10.1088/0022-3719/21/6/019
Abstract
A comprehensive set of thermally detected EPR experiments on several samples of vanadium-doped GaAs crystals is reported. All samples are semi-insulating at liquid-helium temperatures. The resonances are very strong and are either created or enhanced by illumination. From a detailed study of the variation in resonance peaks with both the direction of the magnetic field and with the frequency, it is proposed that the resonances come from a V2+ centre having a 4T1 ground state.Keywords
This publication has 16 references indexed in Scilit:
- An analysis of the T $\otimes$ (e + t2) Jahn-Teller system with strong couplingJournal of Physics C: Solid State Physics, 1987
- The ground states of trigonal Cr2+(II):GaAs. Refinements in the model from low-frequency phonon scatteringSemiconductor Science and Technology, 1987
- An analysis of the T⊗(e+t2) Jahn-Teller system with strong couplingJournal of Physics C: Solid State Physics, 1987
- Localised electron states in semiconductorsReports on Progress in Physics, 1986
- Theoretical investigation of the electrical and optical activity of vanadium in GaAsPhysical Review B, 1986
- Prediction of a low-spin ground state in the GaAs:impurity systemPhysical Review B, 1986
- The Importance of Random Strain in Deep Level Jahn-Teller Systems Studied by TD-EPRMaterials Science Forum, 1986
- The strong APR spectrum from trigonal Cr2+in GaAsJournal of Physics C: Solid State Physics, 1984
- Spectroscopic study of vanadium in GaP and GaAsPhysical Review B, 1982
- Jahn-Teller effects in paramagnetic crystalsPhysics Reports, 1978