Investigation and modeling the surface mobility of MOSFETs from -25 to +150 degrees C
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 970-977
- https://doi.org/10.1109/16.3353
Abstract
No abstract availableKeywords
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