Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
- 1 April 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (4S) , 2425-2427
- https://doi.org/10.1143/jjap.39.2425
Abstract
The polarization properties of doped Ga0.85In0.15N/GaN multiple quantum well structures are investigated under the application of external bias voltages. From Franz-Keldysh oscillations at and above the barrier band edge, the electric field in the barriers is determined. From the bias dependence, we derive the polarity and an offset of 0.51 MV/cm of the internal field. This is attributed to the piezoelectric polarization in the well region of magnitude P = -e z (0.009 - 0. 014) C/m2. We find that Si doping at typical concentrations of 3 ×1018 cm-3 cannot screen the polarization effects on the length scale typical for quantum wells and superlattices but induces large potential barriers.Keywords
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