Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions
- 14 February 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (7) , 812-814
- https://doi.org/10.1063/1.111022
Abstract
Heterostructures with biaxially compressed, As-rich InAsSb are being investigated as active regions for midwave infrared emitters. InAs1−xSbx/In1−xGaxAs (x≊0.1) strained-layer sublattices (SLSs), nominally lattice matched to InAs, were grown using metalorganic chemical vapor deposition. An SLS light-emitting diode was demonstrated which emitted at 3.6 μm with 0.06% efficiency at 77 K. Optically pumped laser emission at 3.9 μm was observed in a SLS/InPSb heterostructure. The laser had a maximum operating temperature of approximately 100 K.This publication has 20 references indexed in Scilit:
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