Decomposition of SiOx Films Due to Internal Stress
- 1 July 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 118 (1) , 239-244
- https://doi.org/10.1002/pssb.2221180129
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- LO‐TO Mode Splittings and Dynamic Effective Charges of Oxygen in Reactively Sputtered SiOx Determined by IR SpectroscopyPhysica Status Solidi (b), 1982
- Infrared Studies of Reactively Sputtered SiOx Films in the Composition Range 0.2 ≦ x ≦ 1.9Physica Status Solidi (b), 1982
- Chemical bond and related properties of SiO2Physica Status Solidi (a), 1981
- Electronic and Optical Properties of SiO xPublished by Springer Nature ,1981
- Chemical bond and related properties of SiO2. VII. Structure and electronic properties of the SiOx region of Si–SiO2 interfacesPhysica Status Solidi (a), 1980
- EPR DEFECTS AND INTERFACE STATES ON OXIDIZED (111) AND (100) SILICONPublished by Elsevier ,1980
- CHEMICAL BONDING IN SiOPublished by Elsevier ,1980
- DEFECTS AND IMPURITIES IN α-QUARTZ AND FUSED SILICAPublished by Elsevier ,1978
- Preparation, Structure, and Applications of Thin Films of Silicon Monoxide and Titanium DioxideJournal of the American Ceramic Society, 1950
- Analysis of Bi-Metal ThermostatsJournal of the Optical Society of America, 1925