A high-current low-energy multi-ion beam deposition system
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 355-358
- https://doi.org/10.1016/0168-583x(91)96193-o
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beamsApplied Physics Letters, 1989
- Long life plasma filament type ion sourceNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Ion beam deposition of β-SiC layers onto α-SiC substratesVacuum, 1989
- Epitaxial growth of InP on Si using MIBE techniqueJournal of Crystal Growth, 1987
- A Molecular and Ion-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Ion BeamJapanese Journal of Applied Physics, 1985
- Molecular beam epitaxy of GaAs using a mass-separated, low-energy As+ ion beamJournal of Vacuum Science & Technology B, 1985
- Molecular Beam Epitaxy of InP Using Low Energy P+ Ion BeamJapanese Journal of Applied Physics, 1985