Molecular beam epitaxy of III–V semiconductors
- 1 January 1993
- journal article
- research article
- Published by Taylor & Francis in Critical Reviews in Solid State and Materials Sciences
- Vol. 18 (3) , 239-260
- https://doi.org/10.1080/10408439308242561
Abstract
Molecular beam epitaxy (MBE) has been instrumental in the advancement of the physics and technology of semiconductors that has occurred over the last few decades. The III-V material system has led the way in these new developments. This article discusses the technology of III-V MBE, highlights selected topics in its development, discusses growth mechanisms, and mentions possible future directions.Keywords
This publication has 59 references indexed in Scilit:
- Design and operation of a valved solid-source As2 oven for molecular beam epitaxyJournal of Vacuum Science & Technology B, 1990
- An ultrahigh vacuum scanning tunneling microscope with a new inchworm mechanismJournal of Vacuum Science & Technology A, 1990
- Surface diffusion during MBE growth of GaAs-AlGaAs single quantum wells on vicinal surfacesJournal of Crystal Growth, 1989
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al,Ga)As lasersJournal of Vacuum Science & Technology B, 1988
- Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruptionJournal of Crystal Growth, 1987
- Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Elimination of flux transients in molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Summary Abstract: Effects of high levels of Be in GaAs by MBEJournal of Vacuum Science & Technology B, 1985