Characterization of nitrided SiO2 thin films using secondary ion mass spectrometry

This publication has 6 references indexed in Scilit:

• Controlled nitrogen incorporation at the gate oxide surface
  Applied Physics Letters, 1995
• Nitrogen content of oxynitride films on Si(100)
  Applied Physics Letters, 1994
• Role of interfacial nitrogen in improving thin silicon oxides grown in N2O
  Applied Physics Letters, 1993
• High quality thin gate oxide prepared by annealing low-pressure chemical vapor deposited SiO2 in N2O
  Applied Physics Letters, 1991
• Nitridation-induced surface donor layer in silicon
  Applied Physics Letters, 1989
• A new secondary ion mass spectrometry technique for III-V semiconductor compounds using the molecular ions CsM+
  Journal of Applied Physics, 1988