Evolution of DC and RF degradation induced by high-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMT MMICs
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The evolution of DC and microwave degradation induced by three-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs was investigated. Reliability investigations were performed on monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.1 /spl mu/m T-gate pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs. Operating at accelerated life test conditions, MMIC amplifiers were lifetested at three-temperatures (T/sub 1/=255/spl deg/C, T/sub 2/=270/spl deg/C and T/sub 3/=285/spl deg/C for 0.1 /spl mu/m GaAs PHEMT; T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C for 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT). High reliability performance with | /spl Delta/S21 | > 1.0 dB as the failure criteria was achieved on both technologies. From the 3-temperature lifetest, while GaAs PHEMT MMICs have activation energy of 1.7 eV, InGaAs/InAlAs/InP HEMT MMICs exhibit the activation energy of 2 eV. The difference is due to the distinct degradation mechanisms, which cause the S21 degradation. For GaAs PHEMTs, S21 degradation is mainly induced by the gradual gate metal sinking through the high-temperature lifetest; on the other hand, for InGaAs/InAlAs/InP HEMTs, the increase of access resistance on the source and drain regions causes the S21 degradation. Nevertheless, MTTF at T/sub channel/=125/spl deg/C of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs is higher than 1/spl times/10/sup 8/ hours. This is state-of-the-art of reliability performance reported on both technologies. From this study, the understanding of degradation evolution leads to the different approaches to improving the high-temperature reliability performance on pseudomorphic GaAs and InGaAs/InAlAs/InP HEMTs.Keywords
This publication has 16 references indexed in Scilit:
- High performance D-band (118 GHz) monolithic low noise amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 190 GHz InP HEMT MMIC LNA with dry etched backside viasPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Drain resistance degradation under high fields in AlInAs/GaInAs MODFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High reliability non-hermetic 0.1 μm GaAs pseudomorphic HEMT MMIC amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High Reliability of 0.1 µm InGaAs/InAlAs/InP High Electron Mobility Transistors Microwave Monolithic Integrated Circuit on 3-inch InP SubstratesJapanese Journal of Applied Physics, 2002
- High-gain 150-215-GHz MMIC amplifier with integral waveguide transitionsIEEE Microwave and Guided Wave Letters, 1999
- Reliability testing of InP HEMT's using electrical stress methodsIEEE Transactions on Electron Devices, 1999
- Degradation mechanism of the AlInAs/GaInAs high electron mobility transistor due to fluorine incorporationApplied Physics Letters, 1996
- Reliability of 0.1 mu m InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993