Reliability testing of InP HEMT's using electrical stress methods
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (8) , 1570-1576
- https://doi.org/10.1109/16.777143
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Simulation of the gate burnout of GaAs MESFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Characterisation of reliability of compound semiconductor devices using electrical pulsesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 80-100 GHz broadband amplifier MMIC utilizing CPWs and quarter micron InP-based HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Drain resistance degradation under high fields in AlInAs/GaInAs MODFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The effect of passivation on the hot electron degradation of lattice-matched InAlAs/InGaAs/InP HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMTsIEEE Microwave and Guided Wave Letters, 1997
- Reduction of the output conductance in InAlAs/InGaAs HEMTs with 0.15 /spl mu/m gatesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequenciesJournal of Crystal Growth, 1995
- Examination of the kink effect in InAlAs/InGaAs/InP HEMTs using sinusoidal and transient excitationIEEE Transactions on Electron Devices, 1995
- Elimination of mesa-sidewall gate leakage in InAlAs/InGaAs heterostructures by selective sidewall recessingIEEE Electron Device Letters, 1992