Simulation of the gate burnout of GaAs MESFET
- 29 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1887-1890
- https://doi.org/10.1109/esref.1996.888238
Abstract
The burnout (irreversible breakdown) mechanism of GaAs MESFET at the gate avalanche breakdown has been studied using two-dimensional (2-D) numerical simulation and pulsed measurements. It is shown, that at some critical level of gate avalanche current the current instability results in formation of the negative differential conductivity region on the gate-source I-V characteristic, spatial instability of the avalanche current and formation of high density current filament.Keywords
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