Thermal breakdown in GaAs MES diodes
- 1 August 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (8) , 1055-1064
- https://doi.org/10.1016/0038-1101(90)90220-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Thermal failure in semiconductor devicesSolid-State Electronics, 1990
- Intrinsic density n i (T) in GaAs: Deduced from band gap and effective mass parameters and derived independently from Cr acceptor capture and emission coefficientsJournal of Applied Physics, 1982
- Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutionsIEEE Transactions on Electron Devices, 1981
- Models for contacts to planar devicesSolid-State Electronics, 1972
- Pulse Power Failure Modes in SemiconductorsIEEE Transactions on Nuclear Science, 1970
- Determination of Threshold Failure Levels of Semiconductor Diodes and Transistors Due to Pulse VoltagesIEEE Transactions on Nuclear Science, 1968