A high power and high efficiency power amplifier for local multipoint distribution service
- 23 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 701-704
- https://doi.org/10.1109/mwsym.1996.511036
Abstract
This paper presents a high power and high efficiency MIC power amplifier using 0.2 /spl mu/m InGaAs-AlGaAs-GaAs pseudomorphic HEMT (PHEMT) devices. The average performance of the power amplifier is 8.75 dB small signal gain, 39.6% power-added-efficiency, and 37 dBm (5.0 W) from 27.5 to 29.5 GHz. At these power levels, the output power density was 780 mW/mm including output circuit losses. This represents the highest output power and efficiency ever reported at Ka-band using MIC amplifiers. Author(s) Siddiqui, M.K. Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA Sharma, A.K. ; Callejo, L.G. ; Chung-Hsu Chen ; Kin Tan ; Huan-Chun YenKeywords
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